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d a t a sh eet product speci?cation supersedes data of 1996 feb 08 file under integrated circuits, ic03 1997 mar 27 integrated circuits TEA1113 low voltage versatile telephone transmission circuit with dialler interface
1997 mar 27 2 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 features low dc line voltage; operates down to 1.6 v (excluding polarity guard) voltage regulator with adjustable dc voltage provides a supply for external circuits symmetrical high impedance inputs (64 k w ) for dynamic, magnetic or piezo-electric microphones asymmetrical high impedance input (32 k w ) for electret microphones dtmf input with confidence tone mute input for pulse or dtmf dialling receiving amplifier for dynamic, magnetic or piezo-electric earpieces dynamic limitation in the transmit direction to prevent distortion of the transmit line and sidetone signals agc line loss compensation for microphone and earpiece amplifiers led on-hook/off-hook status indication microphone mute function available with switch. application line powered telephone sets, cordless telephones, fax machines and answering machines. general description the TEA1113 is a bipolar integrated circuit that performs all speech and line interface functions required in fully electronic telephone sets. it performs electronic switching between speech and dialling. the ic operates at a line voltage down to 1.6 v dc (with reduced performance) to facilitate the use of telephone sets connected in parallel. a current (proportional to the line current and internally limited to 19.5 ma) is available to drive an led which indicates the on-hook/off-hook status. the transmit signal on the line is dynamically limited to prevent distortion at high transmit levels for both the sending line and sidetone signals. the microphone amplifier can be disabled during speech condition by means of a microphone mute function. all statements and values refer to all versions unless otherwise specified. quick reference data i line = 15 ma; v ee =0v; r slpe =20 w ; c dls = 470 nf; agc pin connected to v ee ; z line = 600 w ; f = 1 khz; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit i line line current operating range normal operation 11 - 140 ma with reduced performance 1 - 11 ma i led(max) maximum supply current available i line =18 ma - 0.6 - ma i line >76ma - 19.5 - ma v ln dc line voltage 3.7 4.0 4.3 v v ln(max)(p-p) maximum output voltage swing (peak-to-peak value) 3.8 4.65 - v i cc internal current consumption v cc = 3.2 v - 1.3 1.6 ma v cc supply voltage for peripherals i p = 0 ma 2.8 3.2 - v g vtrx typical voltage gain range microphone amplifier v mic = 2 mv (rms) 38.8 - 51.8 db receiving amplifier v ir = 4 mv (rms) 19.3 - 31.3 db d g vtrx gain control range for microphone and receiving amplifiers with respect to i line =15ma i line =85ma - 5.8 - db d g vtxm microphone ampli?er gain reduction - 80 - db
1997 mar 27 3 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 ordering information block diagram type number package name description version TEA1113 dip16 plastic dual in-line package; 16 leads (300 mil) sot38-4 TEA1113t so16 plastic small outline package; 16 leads; body width 3.9 mm sot109-1 fig.1 block diagram. handbook, full pagewidth att. dtmf v - i dynamic limiter agc circuit current reference low voltage circuit led driver ir mic + mic - dls/mmute v ee i led agc slpe TEA1113 5 4 2 3 10 13 11 6 12 15 14 8 16 1 7 9 gas gar qr ln v cc reg mute v - i v - i v - i mbg018
1997 mar 27 4 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 pinning symbol pin description ln 1 positive line terminal slpe 2 slope (dc resistance) adjustment i led 3 available output current to drive an led reg 4 line voltage regulator decoupling gas 5 sending gain adjustment dls/ mmute 6 dynamic limiter timing adjustment and microphone mute input dtmf 7 dual-tone multi-frequency input mute 8 mute input to select speech or dialling mode (active low) ir 9 receiving ampli?er input agc 10 automatic gain control - line loss compensation mic - 11 inverting microphone ampli?er input mic + 12 non-inverting microphone ampli?er input v ee 13 negative line terminal qr 14 receiving ampli?er output gar 15 receive gain adjustment v cc 16 supply voltage for speech circuit and peripherals fig.2 pin configuration. handbook, halfpage TEA1113 mbg015 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 v cc gar qr v ee mic + mic - agc ir ln slpe i led reg gas dls/mmute dtmf mute functional description all data given in this chapter are typical values, except when otherwise specified. supply (pins ln, slpe, v cc and reg) the supply for the TEA1113 and its peripherals is obtained from the telephone line. the ics generate a stabilized reference voltage (v ref ) between pins ln and slpe. this reference voltage is equal to 3.7 v, is temperature compensated and can be adjusted by means of an external resistor (r va ). it can be increased by connecting the r va resistor between pins reg and slpe, or decreased by connecting the r va resistor between pins reg and ln. the voltage at pin reg is used by the internal regulator to generate the stabilized reference voltage and is decoupled by a capacitor (c reg ) which is connected to v ee . this capacitor, converted into an equivalent inductance (see section set impedance), realizes the set impedance conversion from its dc value (r slpe ) to its ac value (r cc in the audio-frequency range). the voltage at pin slpe is proportional to the line current. figure 3 illustrates the supply configuration. the ic regulates the line voltage at the pin ln, and it can be calculated as follows: i line : line current i cc : current consumption of the ic i p : supply current for peripheral circuits i*: current consumed between ln and v ee i led : supply current for the led component i sh : the excess line current shunted to slpe (and v ee ) via ln. v ln v ref r slpe i slpe + = i slpe i line i cc C i p C i * C i led i + sh ==
1997 mar 27 5 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 the preferred value for r slpe is 20 w . changing r slpe will affect more than the dc characteristics; it also influences the microphone and dtmf gains, the led supply current characteristic, the gain control characteristics, the sidetone level and the maximum output swing on the line. fig.3 supply configuration. handbook, full pagewidth led driver i sh i slpe reg ln slpe v ee v cc r cc c vcc i cc c reg r slpe v exch r exch i led i led i line r line TEA1113 i * i p peripheral circuits 100 m f 4.7 m f 20 w 619 w mbg019 from preamp fig.4 reference voltage adjustment by a r va resistor. (1) r va between reg and slpe. (2) no r va . (3) r va between reg and ln. handbook, halfpage 5.5 v ref (v) 2.5 3.5 4.5 r va ( w ) 10 4 mgd188 10 5 10 6 10 7 (1) (2) (3)
1997 mar 27 6 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 the internal circuitry of the TEA1113 is supplied from pin v cc . this voltage supply is derived from the line voltage by means of a resistor (r cc ) and must be decoupled by a capacitor c vcc . it may also be used to supply peripheral circuits such as dialling or control circuits. the v cc voltage depends on the current consumed by the ic and the peripheral circuits as shown by the formula (see also figs 5 and 6). r ccint is the internal impedance of the voltage supply point, and i rec is the current consumed by the output stage of the earpiece amplifier. the dc line current flowing into the set is determined by the exchange supply voltage (v exch ), the feeding bridge resistance (r exch ), the dc resistance of the telephone line (r line ) and the reference voltage (v ref ). with line currents below 8 ma, the internal reference voltage (generating v ref ) is automatically adjusted to a lower value. this means that more sets can operate in parallel with dc line voltages (excluding the polarity guard) down to an absolute minimum voltage of 1.6 v. at currents below 8 ma, the circuit has limited sending and receiving levels. this is called the low voltage area. v cc v cco r ccint i p i rec C () C = v cco v ln r cc i cc C = handbook, halfpage peripheral circuit i p i rec r ccint v cc v ee v cco mbe792 fig.5 v cc voltage supply for peripherals. set impedance in the audio frequency range, the dynamic impedance is mainly determined by the r cc resistor. the equivalent impedance of the circuits is illustrated in fig.7. led supply (pin i led ) the TEA1113 gives an on-hook/off-hook status indication. this is achieved by a current made available to drive an led connected between pins i led and ln. in the low voltage area, which corresponds to low line current conditions, no current is available for this led. for line currents higher than a threshold current, the i led current increases proportionally to the line current (with a ratio of one third).the i led current is internally limited to 19.5 ma (see fig.8). for 17 ma < i line < 77 ma: this led driver is referenced to slpe. consequently, all the i led supply current will flow through the r slpe resistor. the agc characteristics are not disturbed (see fig.3 for the supply configuration). microphone ampli?er (pins mic + , mic - and gas) the TEA1113 has symmetrical microphone inputs. the input impedance between pins mic + and mic - is 64 k w (2 32 k w ). the voltage gain from pins mic + /mic - to pin ln is set to 51.8 db (typ). the gain can be decreased by connecting an external resistor r gas between pins gas and reg. the adjustment range is 13 db. a capacitor c gas connected between pins gas and reg can be used to provide a first-order low-pass filter. the cut-off frequency corresponds to the time constant c gas (r gasint // r gas ). r gasint is the internal resistor which sets the gain with a typical value of 69 k w . automatic gain control is provided on this amplifier for line loss compensation. dynamic limiter and microphone mute (pin dls/ mmute) the dynamic limiter only acts on the microphone channel, this is to prevent clipping of the line signal. to prevent distortion, the microphone gain is rapidly reduced when peaks on the line signal exceed an internally determined threshold level or when the current in the transmit output stage is insufficient. the time in which the gain reduction is realized is very short (attack time). the microphone channel stays in the reduced gain condition until the peaks i led i line 17 C 3 ---------------------- =
1997 mar 27 7 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 on the line signal remain below the threshold level. the microphone gain then returns to its nominal value after a time determined by the capacitor c dls (release time). the maximum output swing on the line depends on the dc voltage setting (v ref ). the internal threshold level is automatically adapted. a low level on pin dls/ mmute inhibits the microphone inputs mic+ and mic - without affecting the dtmf and receiving inputs. removing the low level from pin dls/ mmute provides the normal function of the microphone amplifier after a short time which is determined by capacitor c dls . with the value of the capacitor at 470 nf, the release time is in the order of a few tenths of a millisecond. the microphone mute function can be realized by a simple switch as illustrated in fig.9. receiving ampli?er (pins ir, gar and qr) the receiving amplifier has one input (ir) and one output (qr). the input impedance between pin ir and pin v ee is 20 k w . the voltage gain from pin ir to pin qr is fixed to 31.3 db (typ). the gain can be decreased by connecting an external resistor r gar between pins gar and qr; the adjustment range is 12 db. two external capacitors c gar (connected between gar and qr) and c gars (connected between gar and v ee ) ensure stability. the c gar capacitor provides a first-order low-pass filter. the cut-off frequency corresponds to the time constant c gar (r garint // r gar ). r garint is the internal resistor which sets the gain with a typical value of 100 k w . the relationship c gars =10 c gar must be fulfilled to ensure stability. the output voltage of the receiving amplifier is specified for continuous wave drive. the maximum output swing depends on the dc line voltage, the r cc resistor, the i cc current consumption of the circuit, the i p current consumption of the peripheral circuits and the load impedance. automatic gain control is provided on this amplifier for line loss compensation. automatic gain control (pin agc) the TEA1113 performs automatic line loss compensation. the automatic gain control varies the gain of the microphone amplifier and the gain of the receiving amplifier in accordance with the dc line current. the control range is 5.8 db (which corresponds approximately to a line length of 5 km for a 0.5 mm diameter twisted-pair copper cable with a dc resistance of 176 w /km and an average attenuation of 1.2 db/km). the ic can be used with different configurations of feeding bridge (supply voltage and bridge resistance) by connecting an external resistor r agc between pins agc and v ee . this resistor enables the i start and i stop line currents to be increased (the ratio between i start and i stop is not affected by the resistor). the agc function is disabled when pin agc is left open-circuit. mute function (pin mute) the mute function performs the switching between the speech mode and the dialling mode. when mute is low or open-circuit, the dtmf input is enabled and the microphone and receiving amplifiers inputs are disabled. when mute is high, the microphone and receiving amplifiers inputs are enabled while the dtmf input is disabled. dtmf ampli?er (pin dtmf) when the dtmf amplifier is enabled, dialling tones may be sent on line. these tones can be heard in the earpiece at a low level (confidence tone). the TEA1113 has an asymmetrical dtmf input. the input impedance between dtmf and v ee is 20 k w . the voltage gain from pin dtmf to pin ln is 25.4 db. when the resistor r gas is connected, to decrease the microphone gain, the dtmf gain varies in the same way (the dtmf gain is 26.4 db lower than the microphone gain with no agc control). the automatic gain control has no effect on the dtmf amplifier. sidetone suppression the TEA1113 anti-sidetone network comprising r cc // z line , r ast1 , r ast2 , r ast3 , r slpe and z bal (see fig.10) suppresses the transmitted signal in the earpiece. maximum compensation is obtained when the following conditions are fulfilled: the scale factor k is chosen to meet the compatibility with a standard capacitor from the e6 or e12 range for z bal . r slpe r ast1 r cc r ast2 r ast3 + () = k r ast2 r ast3 r slpe + () () r ast1 r slpe () ----------------------------------------------------------------------- = z bal kz line =
1997 mar 27 8 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 in practice, z line varies considerably with the line type and the line length. therefore, the value chosen for z bal should be for an average line length which gives satisfactory sidetone suppression with short and long lines. the suppression also depends on the accuracy of the match between z bal and the impedance of the average line. the anti-sidetone network for the TEA1113 (as shown in fig.14) attenuates the receiving signal from the line by 32 db before it enters the receiving amplifier. the attenuation is almost constant over the whole audio frequency range. a wheatstone bridge configuration (see fig.11) may also be used. more information on the balancing of an anti-sidetone bridge can be obtained in our publication applications handbook for wired telecom systems, ic03b , order number 9397 750 00811. fig.6 typical current i p available from v cc for peripheral circuits at i line =15ma. (1) with r va resistor. (2) without r va resistor. handbook, halfpage 4 3 0 01 2 34 mbg016 1 2 v cc (v) (1) (2) i p (ma) fig.7 equivalent impedance between ln and v ee . l eq =c reg r slpe r p ; r p = internal resistance; r p = 15.5 k w . handbook, halfpage ln v ee slpe r slpe c reg reg v cc r cc 4.7 m f 100 m f c vcc 619 w 20 w r p v ref l eq mbe788
1997 mar 27 9 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 fig.8 available current to drive an led. handbook, halfpage 0 100 100 0 20 mbe784 40 60 80 20 40 60 80 i line (ma) i (ma) i slpe i led i sh fig.9 microphone mute function. handbook, halfpage mbg017 c dls v ee r dls 470 nf 3.3 k w dls/mmute fig.10 equivalent circuit of TEA1113 anti-sidetone bridge. handbook, full pagewidth mbe787 i m z ir ir r ast1 r ast3 r ast2 slpe r slpe v ee z line r cc ln z bal
1997 mar 27 10 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics symbol parameter conditions min. max. unit v ln positive continuous line voltage v ee - 0.4 12.0 v repetitive line voltage during switch-on or line interruption v ee - 0.4 13.2 v v n(max) maximum voltage on pins i led , slpe v ee - 0.4 v ln + 0.4 v maximum voltage on all other pins v ee - 0.4 v cc + 0.4 v i line line current r slpe =20 w ; see figs 12 and 13 - 140 ma p tot total power dissipation t amb =75 c; see figs 12 and 13 TEA1113 - 625 mw TEA1113t - 416 mw t stg ic storage temperature - 40 +125 c t amb operating ambient temperature - 25 +75 c symbol parameter value unit r th j-a thermal resistance from junction to ambient in free air (TEA1113) 80 k/w thermal resistance from junction to ambient in free air mounted on epoxy board 40.1 19.1 1.5 mm (TEA1113t) 130 k/w fig.11 equivalent circuit of an anti-sidetone network in a wheatstone bridge configuration. handbook, full pagewidth mbe786 i m z ir ir z bal r ast1 slpe r slpe v ee z line r cc ln r a
1997 mar 27 11 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 fig.12 safe operating area (TEA1113). line t amb ( c) p tot (mw) (1) 45 1000 (2) 55 875 (3) 65 750 (4) 75 625 handbook, halfpage 12 150 30 246810 mbe782 110 70 i line (ma) v ln - v slpe (v) (1) (2) (3) (4) fig.13 safe operating area (TEA1113t). line t amb ( c) p tot (mw) (1) 45 666 (2) 55 583 (3) 65 500 (4) 75 416 handbook, halfpage 212 150 30 70 110 mlc202 46810 130 90 50 i ln (ma) v ln v slpe (v) (1) (2) (3) (4)
1997 mar 27 12 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 characteristics i line = 15 ma; v ee =0v; r slpe =20 w ; c dls = 470 nf; agc pin connected to v ee ; z line = 600 w ; f = 1 khz; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit supply (pins v ln , v cc , slpe and reg) v ref stabilized voltage between ln and slpe 3.45 3.7 3.95 v v ln dc line voltage i line =1ma - 1.6 - v i line =4ma - 2.5 - v i line = 15 ma 3.7 4 4.3 v i line = 140 ma -- 7.0 v v ln(exr) dc line voltage with an external resistor r va r va(ln - reg) =82k w- 3.6 - v r va(slpe - reg )=27k w- 4.75 - v d v ln(t) dc line voltage variation with temperature referred to 25 c t amb = - 25 to +75 c - 30 - mv i cc internal current consumption v cc = 3.2 v - 1.3 1.6 ma v cc supply voltage for peripherals i p = 0 ma 2.8 3.2 - v r ccint equivalent supply voltage impedance i p = 0.5 ma - 550 620 w led supply (pin i led ) i line(h) highest line current for i led < 0.6 ma - 18 - ma i line(l) lowest line current for maximum i led - 76 - ma i led(max) maximum supply current available - 19.5 - ma microphone ampli?er (pins mic + , mic - and gas) ? z i ? input impedance differential between pins mic + and mic - - 64 - k w single-ended between pins mic + /mic - and v ee - 32 - k w g vtx voltage gain from mic + /mic - to ln v mic = 2 mv (rms) 50.6 51.8 53 db d g vtx(f) gain variation with frequency referred to 1 khz f = 300 to 3400 hz - 0.2 - db d g vtx(t) gain variation with temperature referred to 25 c t amb = - 25 to +75 c - 0.3 - db cmrr common mode rejection ratio - 80 - db d g vtxr gain voltage reduction range external resistor connected between gas and reg -- 13 db v notx noise output voltage at pin ln; pins mic + / mic - shorted through 200 w psophometrically weighted (p53 curve) -- 70.5 - dbmp
1997 mar 27 13 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 dynamic limiter and microphone mute (pin dls/ mmute) d ynamic limiter behaviour v ln(max)(p-p) maximum output voltage swing on the line (peak-to-peak value) i line = 15 ma; v ref = 3.7 v 3.8 4.65 - v i line =4ma - 1.6 - thd total harmonic distortion v mic = 4 mv (rms) + 10 db -- 2% v mic = 4 mv (rms) + 15 db -- 10 % t att attack time, v mic jumps from 2 mv up to 20 mv c dls = 470 nf - 1.5 5 ms t rel release time, v mic jumps from 20 mv down to 2 mv c dls = 470 nf 50 150 - ms m icrophone mute input d g vtxm gain reduction dls/ mmute = low - 80 - db v il low level input voltage v ee - 0.4 - v ee + 0.3 v i il low level input current 40 60 -m a t rel release time after a low level on pin dls/ mmute c dls = 470 nf - 30 - ms receiving ampli?er (pins ir, qr and gar) ? z i ? input impedance - 20 - k w g vrx voltage gain from ir to qr v ir = 4 mv (rms) 30.3 31.3 32.3 db d g vrx(f) gain variation with frequency referred to 1 khz f = 300 to 3400 hz - 0.2 - db d g vrx(t) gain variation with temperature referred to 25 c t amb = - 25 to +75 c - 0.3 - db d g vrxr gain voltage reduction range external resistor connected between gar and qr -- 12 db v o(rms) maximum output voltage (rms value) i p = 0 ma sine wave drive; r l = 150 w ; thd = 2% 240 290 - mv i p = 0 ma sine wave drive; r l = 450 w ; thd = 2% 350 410 - mv v norx(rms) noise output voltage at pin qr (rms value) r l = 150 w ; ir open-circuit; psophometrically weighted (p53 curve) -- 86 - dbvp automatic gain control (pin agc) d g vtrx gain control range for microphone and receiving ampli?ers with respect to i line =15ma i line =85ma - 5.8 - db i start highest line current for maximum gain - 25 - ma i stop lowest line current for minimum gain - 59 - ma symbol parameter conditions min. typ. max. unit
1997 mar 27 14 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 dtmf ampli?er (pin dtmf) ? z i ? input impedance - 20 - k w g vdtmf voltage gain from dtmf to ln v dtmf = 25 mv (rms); mute = low 24.2 25.4 26.6 db d g vdtmf(f) gain variation with frequency referred to 1 khz f = 300 to 3400 hz - 0.2 - db d g vdtmf(t) gain variation with temperature referred to 25 c t amb = - 25 to +75 c - 0.5 - db g vct voltage gain from dtmf to qr (con?dence tone) r l = 150 w ; v dtmf = 25 mv (rms) -- 18 - db mute function (pin mute) v il low level input voltage v ee - 0.4 - v ee + 0.3 v v ih high level input voltage v ee + 1.5 - v cc + 0.4 v i mute input current mute = high - 1.25 3 m a d g vtrxm gain reduction for microphone and receiving ampli?ers mute = low - 80 - db symbol parameter conditions min. typ. max. unit
1997 mar 27 15 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 application information handbook, full pagewidth telephone line 4 x bas11 a/b b/a v dr 95 v bzv85c10 bzx79c10 r ast1 r prot 130 k w 390 w r ast2 r ast3 3.92 k w z bal c ir c gar c gars 10 w ir bf473 bsn254 bc547 bc558 bc547 pd input r pd4 470 k w r pd5 470 k w r pd3 1 m w r pd2 470 k w r pd6 68 k w qr gar mic + mic - signal from dial and control circuits c vcc supply for peripheral circuits r cc 619 w r slpe r limit 3.9 w c gas c reg 20 w r pd1 470 k w v cc dtmf mute i led ln slpe gas reg agc v ee TEA1113 100 pf 100 m f 1 nf 100 pf 4.7 m f mgd020 dls/mmute c dls r dls 470 nf 3.3 k w fig.14 typical application of the TEA1113 in sets with pulse dialling or flash facilities.
1997 mar 27 16 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 package outlines references outline version european projection issue date iec jedec eiaj sot38-4 92-11-17 95-01-14 m h c (e ) 1 m e a l seating plane a 1 w m b 1 b 2 e d a 2 z 16 1 9 8 e pin 1 index b 0 5 10 mm scale note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. unit a max. 12 b 1 (1) (1) (1) b 2 cd e e m z h l mm dimensions (inch dimensions are derived from the original mm dimensions) a min. a max. b max. w m e e 1 1.73 1.30 0.53 0.38 0.36 0.23 19.50 18.55 6.48 6.20 3.60 3.05 0.254 2.54 7.62 8.25 7.80 10.0 8.3 0.76 4.2 0.51 3.2 inches 0.068 0.051 0.021 0.015 0.014 0.009 1.25 0.85 0.049 0.033 0.77 0.73 0.26 0.24 0.14 0.12 0.01 0.10 0.30 0.32 0.31 0.39 0.33 0.030 0.17 0.020 0.13 dip16: plastic dual in-line package; 16 leads (300 mil) sot38-4
1997 mar 27 17 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 8 9 1 16 y pin 1 index unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.0 0.4 sot109-1 91-08-13 95-01-23 076e07s ms-012ac 0.069 0.0098 0.0039 0.057 0.049 0.01 0.019 0.014 0.0098 0.0075 0.39 0.38 0.16 0.15 0.050 1.05 0.041 0.24 0.23 0.028 0.020 0.028 0.012 0.01 0.25 0.01 0.004 0.039 0.016 0 2.5 5 mm scale so16: plastic small outline package; 16 leads; body width 3.9 mm sot109-1
1997 mar 27 18 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). dip s oldering by dipping or by wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joint for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg max ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. r epairing soldered joints apply a low voltage soldering iron (less than 24 v) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. so r eflow soldering reflow soldering techniques are suitable for all so packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. w ave soldering wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. r epairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1997 mar 27 19 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1113 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1997 sca53 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220, 5th floor, suite 51, 04552-903 s?o paulo, s?o paulo - sp, brazil, tel. +55 11 821 2333, fax. +55 11 829 1849 spain: balmes 22, 08007 barcelona, tel. +34 3 301 6312, fax. +34 3 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 632 2000, fax. +46 8 632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2686, fax. +41 1 481 7730 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2870, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 625 344, fax.+381 11 635 777 for all other countries apply to: philips semiconductors, marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 1949 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580/xxx france: 4 rue du port-aux-vins, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, shivsagar estate, a block, dr. annie besant rd. worli, mumbai 400 018, tel. +91 22 4938 541, fax. +91 22 4938 722 indonesia: see singapore ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 middle east: see italy printed in the netherlands 417027/1200/02/pp20 date of release: 1997 mar 27 document order number: 9397 750 00632

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